Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

被引：21

作者：

Calka, P. ^{[1
]}

Martinez, E. ^{[1
]}

Lafond, D. ^{[1
]}

Minoret, S. ^{[1
]}

Tirano, S. ^{[2
]}

Detlefs, B. ^{[3
]}

Roy, J. ^{[3
]}

Zegenhagen, J. ^{[3
]}

Guedj, C. ^{[1
]}

机构：

[1] CEA LETI, F-38054 Grenoble 9, France

[2] Univ Aix Marseille 1, Polytech Marseille, IM2NP, CNRS,UMR 6242, F-13451 Marseille 20, France

[3] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

关键词：

TRANSITION-METAL OXIDES; ELECTRONIC-STRUCTURE; PHOTOEMISSION-SPECTROSCOPY; NICKEL-OXIDE; NIO(100); DEFECT; MEMORIES; SURFACES;

D O I：

10.1063/1.3596809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated origins of the resistivity change during the forming of NiO based resistive random access memories in a nondestructive way using hard x-ray photoelectron spectroscopy. Energy shifts and bandgap states observed after switching suggest that oxygen vacancies are created in the low resistive state. As a result conduction may occur via defects such as electrons traps and metallic nickel impurities. Migration of oxygen atoms seems to be the driving mechanism. This provides concrete evidence of the major role played by oxygen defects in decreasing resistivity. This is a key point since oxygen vacancies are particularly unstable and thus difficult to identify by physico-chemical analyses. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596809]

引用

页数：6

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