Two-stage high gain W-band amplifier using metamorphic HEMT technology

被引：0

作者：

Lee, BH ^{[1
]}

Dan-An ^{[1
]}

Lee, MK ^{[1
]}

Lim, BO ^{[1
]}

Kim, SD ^{[1
]}

Rhee, JK ^{[1
]}

机构：

[1] Dongguk Univ, MINT, Seoul, South Korea

来源：

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we shows a W-band (75-110 GHz) application of metamorphic HEMTs (MHEMTs). We fabricated two stage MIMIC amplifier using 0.1 mu m InGaAs/InAlAs/GaAs MHEMT technology. The performances of MHEMT show a drain current density (I-dss) of 643 mA/mm, maximum transconductance (gm,max) of 650 mS/mm, the current gain cut-off frequency (f(t)) of 172 GHz and the maximum oscillation frequency (f(max)) of 271 GHz. The W-band amplifier was designed using CPW line and non-linear model technologies. The measured results of the W-band MIMIC amplifiers show S-21 gain of 10, 1 dB, S-11 of -5.1 dB and S-22 of -5.2 dB at 100 GHz, respectively.

引用

页码：39 / 42

页数：4

共 13 条

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