3D non-equilibrium molecular dynamics (NEMD) simulations using embedded atom potentials method (EAM) are performed to identify the dynamics processes of atomic-scale interfacial friction taking places in metal tribopairs. A block-block sliding simulation model for soft-to-hard (Cu/Fe) and soft-to-soft (Cu/Ag) tribopairs with is built. The microstructural evolution and temperature variation of the two tribopairs are analyzed at different sliding speeds. The results show that the average temperature of the two different tribopairs both increases rapidly during the transient sliding period. The different microstructural changes for the two tribopairs, including extensive plastic deformation, mechanical mixing and material transfer are observed when the temperature rapidly increases. The characteristics of the friction effects for the two tribopairs are also revealed by analyzing the friction force evolution as a function of time and velocity. (C) 2011 Elsevier B.V. All rights reserved.
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Samsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USASamsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
Kim, H. -J.
Karthikeyan, S.
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Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, IndiaSamsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
Karthikeyan, S.
Rigney, D.
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Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USASamsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Zhang, Y. S.
Han, Z.
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Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Han, Z.
Wang, K.
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Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Wang, K.
Lu, K.
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Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
机构:
Samsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USASamsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
Kim, H. -J.
Karthikeyan, S.
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Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, IndiaSamsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
Karthikeyan, S.
Rigney, D.
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机构:
Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USASamsung Elect, Memory Div, Proc Dev Team, Semicond Business, Hwasung City 445701, Gyeonggi Do, South Korea
机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Zhang, Y. S.
Han, Z.
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机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Han, Z.
Wang, K.
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机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Wang, K.
Lu, K.
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Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China