A Compact High Efficiency and High Power Front-end Module for GSM/EDGE/TD-SCDMA/TD-LTE Applications in 0.13um CMOS

被引:0
|
作者
He, Shihai [1 ]
Peng, Fengxiong [1 ]
Xu, Linjian [1 ]
Meng, Hao [1 ]
Qian, Yongxue [1 ]
机构
[1] Beijing Huntersun Elect Co Ltd, Beijing, Peoples R China
来源
2018 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC): PROCEEDINGS OF TECHNICAL PAPERS | 2018年
关键词
CMOS; power amplifier; flip-chip; front-end module; transformer; EDGE; wireless communication;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a multimode multiband transmitter front-end module (TXM) fully integrated on a new 4-layer laminate substrate process supporting GSMI/EDGE/TD-SCDMA/TD-LTE. In the TXM, a new compact power amplifier (PA) matching network including transformer and harmonic filter is proposed on this process with low insertion loss. An adaptive bias circuit is also proposed to enhance the PA linearity. The TXM including the 0.13um CMOS PA, SP16T antenna switch and all passive components is fully integrated in a flip-chip LGA package. Compared with other works, the measurement results of this work show 30dBm high linear power with 19% high power-added efficiency(PAE) in 915MHz EDGE mode. It also shows high linear power of 27dBm and 24dBm in TD-SCDMA mode and TD-LTE mode, respectively. The proposed TXM meets the class E2 power requirement with enough output power margin and high efficiency.
引用
收藏
页码:289 / 292
页数:4
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