A hybrid double-dot in silicon

被引：13

作者：

Gonzalez-Zalba, M. Fernando ^{[1
]}

Heiss, Dominik ^{[1
]}

Ferguson, Andrew J. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

NEW JOURNAL OF PHYSICS | 2012年 / 14卷

基金：

英国工程与自然科学研究理事会;

关键词：

DOUBLE-QUANTUM DOT; PAULI SPIN BLOCKADE; TRANSPORT SPECTROSCOPY; ELECTRON-SPIN; SINGLE DOPANT;

D O I：

10.1088/1367-2630/14/2/023050

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report electrical measurements of a single arsenic dopant atom in the tunnel barrier of a silicon single-electron transistor (SET). In addition to performing the electrical characterization of the individual dopant, we study the series electrical transport through the dopant and SET. We measure the triple points of this hybrid double-dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.

引用

页数：11

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