IGBT and Diode Loss Estimation Under Hysteresis Switching

被引：82

作者：

Bazzi, Ali M. ^{[3
]}

Krein, Philip T. ^{[3
]}

Kimball, Jonathan W. ^{[1
]}

Kepley, Kevin ^{[2
]}

机构：

[1] Missouri Univ Sci & Technol, Rolla, MO 65401 USA

[2] Bitrode Corp, Fenton, MO USA

[3] Univ Illinois, Urbana, IL 61801 USA

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2012年 / 27卷 / 03期

关键词：

Aperiodic switching; electrothermal design; hysteresis switching; IGBT loss estimation; semiconductor losses; POWER LOSSES; TEMPERATURE; SIMULATION;

D O I：

10.1109/TPEL.2011.2164267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a power loss estimation method for insulated-gate bipolar transistors (IGBTs) and diodes that operate under hysteresis switching. The method relies on datasheet information and three measurements in a phase leg: phase current, one IGBT switching gate signal, and the dc bus voltage across the phase leg. No parasitic models, thermal analysis, or slow simulations are required, and measurements can be provided from simulations or experiments. The method is validated for periodic pulsewidth modulation, then for aperiodic hysteresis switching. Results show that the proposed method is accurate while maintaining simplicity. It is promising for implementation in combined thermoelectric simulations and design optimization.

引用

页码：1044 / 1048

页数：5

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