Room-temperature electroluminescence from radial p-i-n InP/InAsP/InP nanowire heterostructures in the 1.5-μm-wavelength region

被引：13

作者：

Kawaguchi, Kenichi ^{[1
,2
]}

Sudo, Hisao ^{[1
]}

Matsuda, Manabu ^{[1
]}

Ekawa, Mitsuru ^{[1
]}

Yamamoto, Tsuyoshi ^{[1
]}

Arakawa, Yasuhiko ^{[2
,3
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 04期

关键词：

INP; PHOTOLUMINESCENCE; DIFFUSION; MECHANISM; GROWTH;

D O I：

10.7567/JJAP.54.04DN02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystal growth of radial p-i-n InP nanowires (NWs) with InAsP quantum well (QW) layers by metalorganic vapor-phase epitaxy was studied, and vertical NW light-emitting devices were fabricated. Radial p-i-n NWs were formed using position-controlled n-type InP NW cores. By optimizing the flow rates of the Zn source, Zn-doped p-type InP shells were grown on the sidewall of the radial QW structures while maintaining the photoluminescence intensity of the QWs. The fabricated devices showed current rectification originating from the p-i-n diode structures. Electroluminescence from the radial QWs was clearly observed in the 1.5-mu m-wavelength region at room temperature for the first time. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

共 12 条

[1] Improving optoelectronic properties of InP/InAs nanowire p-i-n devices with telecom-band electroluminescence
Zhang, Guoqiang
Tateno, Kouta
Sasaki, Satoshi
Tawara, Takehiko
Hibino, Hiroki
Gotoh, Hideki
Sanada, Haruki
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[2] Room temperature electroluminescence from a c-Si p-i-n structure
Dittrich, T
Timoshenko, VY
Rappich, J
Tsybeskov, L
JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2310 - 2313
[3] Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm
Della Corte, FG
Cocorullo, G
Iodice, M
Rendina, I
APPLIED PHYSICS LETTERS, 2000, 77 (11) : 1614 - 1616
[4] Room-temperature electroluminescence at 1.55 μm from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy
Oga, R
Lee, WS
Fujiwaxa, Y
Takeda, Y
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 15 - 18
[5] Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi2 particles embedded in the intrinsic silicon
Li, Cheng
Suemasu, T.
Hasegawa, F.
Journal of Applied Physics, 2005, 97 (04):
[6] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH
LEE, TP
BURRUS, CA
DENTAI, AG
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 232 - 238
[7] OTDR IN A 147KM SINGLE-MODE FIBER IN 1.55-MU-M WAVELENGTH REGION USING AN LD AND GAINAS/INP APD AT ROOM-TEMPERATURE
NAMIHIRA, Y
HORIUCHI, Y
WAKABAYASHI, H
OSHIMI, T
KITAGAWA, K
OOKA, T
ELECTRONICS LETTERS, 1987, 23 (23) : 1219 - 1221
[8] Improved room-temperature 1.6 μm electroluminescence from p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes
Suzuno, Mitsushi
Murase, Shigemitsu
Koizumi, Tomoaki
Suemasu, Takashi
APPLIED PHYSICS EXPRESS, 2008, 1 (02)
[9] Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi2 particles embedded in the intrinsic silicon -: art. no. 043529
Li, C
Suemasu, T
Hasegawa, F
JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
[10] Room-temperature 2-μm GeSn P-I-N homojunction light-emitting diode for inplane coupling to group-IV waveguides
Chang, Chiao
Chang, Tai-Wei
Li, Hui
Cheng, Hung Hsiang
Soref, Richard
Sun, Greg
Hendrickson, Joshua R.
APPLIED PHYSICS LETTERS, 2017, 111 (14)

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