Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

被引：6

作者：

Al Risi, Suleiman ^{[1
]}

Sbiaa, Rachid ^{[1
]}

Al Bahri, Mohammed ^{[2
]}

机构：

[1] Sultan Qaboos Univ, Dept Phys, POB 36, Muscat 123, Oman

[2] ASharqiyah Univ, Dept Basic Sci, Post Box 42, Ibra 400, Oman

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 16期

关键词：

domain wall motion; magnetic nanowires; perpendicular magnetic anisotropy; spin transfer torque; MOTION; SPINTRONICS; FIELD; SPIN;

D O I：

10.1002/pssa.202000225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy. A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multibit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current densityJ(dep)is investigated with emphasis on device geometry and material intrinsic properties. TheJ(dep)can be analytically determined as a function of the nanoconstriction dimension and the thickness of the nanowire. Furthermore,J(dep)is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.

引用

页数：6

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