AFM nano-oxidation of NiFe thin films capped with Al-oxide layers for planar-type tunnel junction

被引：1

作者：

Hasegawa, Shunsuke ^{[1
]}

Yamada, Shogo ^{[1
]}

Yamada, Tsutomu ^{[1
]}

Shirakashi, Jun-ichi ^{[2
]}

Takemura, Yasushi ^{[1
]}

机构：

[1] Yokohama Natl Univ, Dept Elect & Comp Engn, Yokohama, Kanagawa 2408501, Japan

[2] Tokyo Univ Agr & Technol, Dept Elect & Elect Syst Engn, Tokyo 1848588, Japan

来源：

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING | 2008年 / 3卷 / 04期

关键词：

atomic force microscope; nanostructure; nanolithography; magnetic thin film; tunnel junction;

D O I：

10.1002/tee.20287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The NiFe-based planar-type magnetic tunnel junction was fabricated. The patterned NiFe thin film of 10 nm thickness was covered with an insulating Al-oxide layer. The channel width was 2 pm. The nano-oxidation technique using an atomic force microscope was used in order to form a tunnel barrier of the junction. The current-voltage characteristic of the junction exhibited a rectifying curve, which indicated that the nanowires of NiFe-oxide acted as the potential barrier. Equivalent values for the barrier height and barrier width of 1.75 eV and 1.5 nm were deduced from the Simmons' formula, respectively. (C) 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

引用

页码：382 / 385

页数：4

共 5 条

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