High-voltage rf operation of AlGaN/GaN heterojunction FETs

被引：27

作者：

Kuzuhara, M ^{[1
]}

Miyamoto, H ^{[1
]}

Ando, Y ^{[1
]}

Inoue, T ^{[1
]}

Okamoto, Y ^{[1
]}

Nakayama, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Adv HF Device R&D Ctr, R&D Assoc Future Electron Devices, Otsu, Shiga 5200833, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 200卷 / 01期

关键词：

D O I：

10.1002/pssa.200303252

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews the present status of AlGaN/GaN heterojunction FETs for microwave and millimetre-wave applications. The epitaxial structure of the FET and its fabrication process are described. The dc and rf characteristics are also reported, including state-of-the-art power performance at 2 GHz and 30 GHz. The future prospects of GaN-based transistors are also discussed. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：161 / 167

页数：7

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