High-voltage rf operation of AlGaN/GaN heterojunction FETs

被引:27
作者
Kuzuhara, M [1 ]
Miyamoto, H [1 ]
Ando, Y [1 ]
Inoue, T [1 ]
Okamoto, Y [1 ]
Nakayama, T [1 ]
机构
[1] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Adv HF Device R&D Ctr, R&D Assoc Future Electron Devices, Otsu, Shiga 5200833, Japan
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 200卷 / 01期
关键词
D O I
10.1002/pssa.200303252
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reviews the present status of AlGaN/GaN heterojunction FETs for microwave and millimetre-wave applications. The epitaxial structure of the FET and its fabrication process are described. The dc and rf characteristics are also reported, including state-of-the-art power performance at 2 GHz and 30 GHz. The future prospects of GaN-based transistors are also discussed. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:161 / 167
页数:7
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