Mechanical Writing of Ferroelectric Polarization

被引：714

作者：

Lu, H. ^{[1
]}

Bark, C. -W. ^{[2
]}

Esque de los Ojos, D. ^{[3
]}

Alcala, J. ^{[4
]}

Eom, C. B. ^{[2
]}

Catalan, G. ^{[5
,6
,7
]}

Gruverman, A. ^{[1
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[3] Univ Politecn Cataluna, Dept Fluid Mech, Grp Interdept Colaborac Cient Aplicada GRICCA, Barcelona, Spain

[4] Univ Politecn Cataluna, Dept Mat Sci & Met Engn, Grp Interdept Colaborac Cient Aplicada GRICCA, Barcelona, Spain

[5] ICREA, Catalunya, Spain

[6] CSIC, Ctr Invest Nanosci & Nanotechnol CIN2, Barcelona, Spain

[7] ICN, Barcelona, Spain

来源：

SCIENCE | 2012年 / 336卷 / 6077期

基金：

美国国家科学基金会;

关键词：

SCANNING FORCE MICROSCOPY; THIN-FILMS; STRESS; NANOSCALE; BEHAVIOR;

D O I：

10.1126/science.1218693

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong intrinsic coupling between polarization and deformation also causes all ferroelectrics to be piezoelectric, leading to applications in sensors and high-displacement actuators. A less explored property is flexoelectricity, the coupling between polarization and a strain gradient. We demonstrate that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film. Pure mechanical force can therefore be used as a dynamic tool for polarization control and may enable applications in which memory bits are written mechanically and read electrically.

引用

页码：59 / 61

页数：3

共 26 条

[1] Epitaxial La0.67Sr0.33MnO3/La0.67Ba0.33MnO3 superlattices -: art. no. 10J107 [J].

Belenky, LJ ;

Ke, XL ;

Rzchowski, M ;

Eom, CB .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[2] Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale [J].

Bonnell, D. A. ;

Kalinin, S. V. ;

Kholkin, A. L. ;

Gruverman, A. .

MRS BULLETIN, 2009, 34 (09) :648-657

[3] Polar domains in lead titanate films under tensile strain [J].

Catalan, G ;

Janssens, A ;

Rispens, G ;

Csiszar, S ;

Seeck, O ;

Rijnders, G ;

Blank, DHA ;

Noheda, B .

PHYSICAL REVIEW LETTERS, 2006, 96 (12) :1-4

[4] The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films [J].

Catalan, G ;

Sinnamon, LJ ;

Gregg, JM .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (13) :2253-2264

[5] Domain wall nanoelectronics [J].

Catalan, G. ;

Seidel, J. ;

Ramesh, R. ;

Scott, J. F. .

REVIEWS OF MODERN PHYSICS, 2012, 84 (01) :119-156

[6]

Catalan G, 2011, NAT MATER, V10, P963, DOI [10.1038/nmat3141, 10.1038/NMAT3141]

[7] Enhancement of ferroelectricity in strained BaTiO3 thin films [J].

Choi, KJ ;

Biegalski, M ;

Li, YL ;

Sharan, A ;

Schubert, J ;

Uecker, R ;

Reiche, P ;

Chen, YB ;

Pan, XQ ;

Gopalan, V ;

Chen, LQ ;

Schlom, DG ;

Eom, CB .

SCIENCE, 2004, 306 (5698) :1005-1009

[8] Effect of external stress on ferroelectricity in epitaxial thin films [J].

Emelyanov, AY ;

Pertsev, NA ;

Kholkin, AL .

PHYSICAL REVIEW B, 2002, 66 (21) :1-8

[9] SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) [J].

EOM, CB ;

CAVA, RJ ;

FLEMING, RM ;

PHILLIPS, JM ;

VANDOVER, RB ;

MARSHALL, JH ;

HSU, JWP ;

KRAJEWSKI, JJ ;

PECK, WF .

SCIENCE, 1992, 258 (5089) :1766-1769

[10] Stabilization of monodomain polarization in ultrathin PbTiO3 films [J].

Fong, DD ;

Kolpak, AM ;

Eastman, JA ;

Streiffer, SK ;

Fuoss, PH ;

Stephenson, GB ;

Thompson, C ;

Kim, DM ;

Choi, KJ ;

Eom, CB ;

Grinberg, I ;

Rappe, AM .

PHYSICAL REVIEW LETTERS, 2006, 96 (12)

← 1 2 3 →