High Si and Ge n-type doping of GaN doping - Limits and impact on stress

被引：164

作者：

Fritze, S. ^{[1
]}

Dadgar, A. ^{[1
]}

Witte, H. ^{[1
]}

Buegler, M. ^{[2
]}

Rohrbeck, A. ^{[1
]}

Blaesing, J. ^{[1
]}

Hoffmann, A. ^{[2
]}

Krost, A. ^{[1
]}

机构：

[1] Otto Von Guericke Univ, Inst Expt Phys, Fak Nat Wissensch, D-39016 Magdeburg, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

关键词：

carrier density; crystal structure; doping profiles; gallium compounds; germanium; Hall effect; III-V semiconductors; Raman spectra; secondary ion mass spectra; semiconductor doping; semiconductor growth; silicon; stress analysis; tensile strength; wide band gap semiconductors; X-ray diffraction; MOLECULAR-BEAM EPITAXY; THIN-FILMS; DEPOSITION; STRAIN; LAYERS;

D O I：

10.1063/1.3695172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on GaN n-type doping using silane, germane, and isobutylgermane as Si and Ge dopants, respectively. A significant increase in tensile stress during growth is observed for Si doped samples while this is not the case for Ge doping. In addition, Ge can be doped up to 2.9 x 10(20) cm(-3), while Si doping leads to 3-D growth already at concentrations around 1.9 x 10(19) cm(-3). The free carrier concentration was determined by Hall-effect measurements, crystal quality, and structural properties by x-ray diffraction measurements. Additionally, secondary ion mass spectroscopy and Raman measurements were performed demonstrating the high material quality of Ge doped samples. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695172]

引用

页数：4

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