Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source

被引：3

作者：

Tanide, Atsushi ^{[1
,3
]}

Nakamura, Shohei ^{[1
]}

Horikoshi, Akira ^{[1
,3
]}

Takatsuji, Shigeru ^{[1
]}

Kohno, Motohiro ^{[1
,3
]}

Kinose, Kazuo ^{[1
]}

Nadahara, Soichi ^{[1
]}

Nishikawa, Masazumi ^{[2
]}

Ebe, Akinori ^{[2
]}

Ishikawa, Kenji ^{[3
]}

Hori, Masaru ^{[3
]}

机构：

[1] SCREEN Holdings Co Ltd, Fushimi Ku, Kyoto 6028486, Japan

[2] EMD Corp, Yasu, Shiga 5202323, Japan

[3] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SA期

关键词：

STRUCTURAL-PROPERTIES; AIN; SAPPHIRE; EPITAXY; QUALITY; SI(111); LAYER;

D O I：

10.7567/1347-4065/aaeb39

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hetero-epitaxial growth of a gallium nitride (GaN) film on an AlN(0 0 0 1) buffer layer on a sapphire(0 0 0 1) substrate was demonstrated by supplying gallium precursors and nitrogen radicals separately from two individually operated plasma sources to control the V/III supplying ratio precisely. The sources were a reactive Ar-Cl-2-mixture plasma sputtering of a gallium target and a remote low inductance antenna (LIA) for N-2-H-2 inductively coupled-plasma. Lateral growth of the GaN film was observed in 0.5%-Cl-2-added Ar sputtering at a low growth temperature of 670 degrees C, whilst the growth mode coalesced at temperatures lower than 600 degrees C. With more than 2.0% of Cl-2, no film was deposited due to etching by the reactive chlorine whenever the temperature was at 500 degrees C. At the growth temperature of 670 degrees C, crystallinity with narrow a X-ray rocking curve GaN (0 0 0 2) was obtained at the condition of 0.5% Cl-2 and 27.4% N-2, even though the background pressure was 10(-4) Pa. (C) 2019 The Japan Society of Applied Physics

引用

页数：6