Comprehensive chemistry designs in porous SiOCH film stacks and plasma etching gases for damageless Cu interconnects in advanced ULSI devices

被引：21

作者：

Hayashi, Yoshihiro ^{[1
]}

Ohtake, Hiroto ^{[1
]}

Kawahara, Jun ^{[1
]}

Tada, Munehiro ^{[1
]}

Saito, Shinobu ^{[1
]}

Inoue, Naoya ^{[1
]}

Ito, Fuminori ^{[1
]}

Tagami, Masayoshi ^{[1
]}

Ueki, Makoto ^{[1
]}

Furutake, Naoya ^{[1
]}

Takeuchi, Tsuneo ^{[1
]}

Yamamoto, Hironori ^{[1
]}

Abe, Mari ^{[1
]}

机构：

[1] NEC Elect Corp, LSI Fundamental Res Lab, Kanagawa 2291198, Japan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2008年 / 21卷 / 03期

关键词：

interconnect; LSI; low-k dielectrics; plasma etching test;

D O I：

10.1109/TSM.2008.2001225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High performance Cu dual-damascene (DD) interconnects without process-induced damages are developed in porous SiOCH stacks with the effective dielectric constant (k(eff)) of 2.95, in which a carbon (C)-rich molecular-pore-stacking (MPS) SiOCH film (k = 2.5) is stacked directly on an oxygen (O)-rich porous SiOCH (k = 2.7) film. The novel etch-stopperless structure is obtained by comprehensive chemistry design of C/O ratios in the SiOCH stack and the etching plasma of an Ar/N-2/CF4/O-2 gas mixture technique. Large hydrocarbons attached to hexagonal silica backbones in the MPS-SiOCH prevent the Si-CHx bonds from oxidation during O-2-plasma ashing, suppressing the C-depleted damage area at the DID sidewall. Combining multiresist mask process with immersion ArF photolithography, strictly controlled Cu DD interconnects with 180-nm pitched lines and 65-nm-diameter vias are obtained successfully, ready for the 300-mm fabrication.

引用

页码：469 / 480

页数：12

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