Improved microwave dielectric properties of novel low-permittivity Sn-doped Ca2HfSi4O12 ceramics

被引：24

作者：

Du, Kang ^{[1
,2
]}

Song, Xiao-Qiang ^{[1
,2
]}

Zou, Zheng-Yu ^{[1
,2
]}

Fan, Jun ^{[1
,2
]}

Lu, Wen-Zhong ^{[1
,2
]}

Lei, Wen ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[2] Minist Educ, Key Lab Funct Mat Elect Informat B, Wuhan 430074, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2020年 / 129卷

基金：

中国国家自然科学基金;

关键词：

Ca2HfSi4O12; ceramic; Sn4+ substitution for Hf4+; Phase composition; Microwave dielectric properties; CRYSTAL-STRUCTURE; PHASE EVOLUTION; SILICATE;

D O I：

10.1016/j.materresbull.2020.110887

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phase compositions and microwave dielectric properties of Ca-2(Hf1-xSnx)Si4O12 (0 <= x <= 0.5) were investigated by the solid-state reaction method. A single-phase ceramic with monoclinic structure was formed in the Ca-2(Hf1-xSnx)Si4O12 (0 <= x <= 0.2) ceramic. At 0.25 <= x <= 0.5, CaSiO3 and CaSnSiO5 second phases appeared. The microwave dielectric properties of a novel Ca2HfSi4O12 ceramic (epsilon(r) = 8.1, Q x f = 39,700 GHz and tau(f) = -12.7 ppm/degrees C) were obtained. Partial substitution of Sn4+ for Hf4+ could reduce its relative permittivity and improve quality factor, and the highest quality factor of 49,500 GHz was obtained at x = 0.2. The tau(f )value of Ca-2(Hf1-xSnx)Si4O12 ceramics could be controlled to a near-zero value by the CaSnSiO5 second phase when x > 0.3. The optimum microwave dielectric properties (epsilon(r) = 8.0, Q x f = 37,100 GHz and tau(f) = -7.2 ppm/degrees C) were achieved in the Ca-2(Hf1-xSnx)Si4O12 (x = 0.4) ceramic.

引用

页数：6

共 32 条

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