Room-temperature type-I GaSb-based lasers in the 3.0-3.7 μm wavelength range

被引：14

作者：

Vizbaras, Kristijonas ^{[1
]}

Vizbaras, Augustinas ^{[1
]}

Andrejew, Alexander ^{[1
]}

Grasse, Christian ^{[1
]}

Sprengel, Stephan ^{[1
]}

Amann, Markus-Christian ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS XI | 2012年 / 8277卷

关键词：

GaSb; semiconductor lasers; quantum well; gas sensing; DIODE-LASERS; OPERATION; BARRIERS; GAINASSB;

D O I：

10.1117/12.905930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaSb-based type-I quantum-well lasers, emitting in the spectral range from 2 to 4 mu m are promising light sources for various trace gas sensing systems by means of tunable diode laser absorption spectroscopy (TDLAS). Excellent device performance has been achieved so far in the spectral range from 2 to 3 mu m, however, room-temperature operation above 3 mu m is much more difficult to achieve. In this work we demonstrate the extension of room-temperature operation wavelength of GaSb-based type-I lasers up to 3.73 mu m by implementation of high-quality quinternary AlGaInAsSb heterostructures.

引用

页数：7

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