High Density Metal-Metal Interconnect Bonding for 3-D Integration

被引：28

作者：

Lannon, John M., Jr. ^{[1
]}

Gregory, Chris ^{[1
]}

Lueck, Matthew ^{[1
]}

Reed, Jason D. ^{[1
]}

Huffman, Charles A. ^{[1
]}

Temple, Dorota ^{[1
]}

机构：

[1] RTI Int, Ctr Mat & Elect Technol, Res Triangle Pk, NC 27709 USA

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2012年 / 2卷 / 01期

关键词：

3-D integration; 3-D interconnect; Cu-Cu interconnects; Cu/Sn-Cu interconnects; high density interconnect bonding; solid-liquid diffusion bonding; thermo-compression bonding; BUMP INTERCONNECTION; STACKING; PARAMETERS; PITCH;

D O I：

10.1109/TCPMT.2011.2175922

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

3-D integration provides a pathway to achieve high performance microsystems through bonding and interconnection of best-of-breed materials and devices. Bonding of device layers can be accomplished by dielectric bonding and/or metal-metal interconnect bonding with a number of metal-metal systems currently under development. RTI has been investigating Cu-Cu and Cu/Sn-Cu interconnect processes for high density area array applications. The interconnect pad fabrication processes and the interconnect bonding conditions (pressure and temperature) required for the formation of low resistance (10's of m Omega), high yielding (>= 99.98% bond yield), and reliable interconnects are described. The effects of thermal reliability testing (aging) on electrical connectivity and mechanical strength are presented. Results from the two metal-metal interconnect bonding systems are compared in terms of ease of assembly and small pitch (sub-15 mu m) scaling. Methods for obtaining high bond yield at smaller pitches are discussed.

引用

页码：71 / 78

页数：8

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