The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors

被引:8
作者
Lee, I-Che [1 ,2 ]
Yang, Po-Yu [1 ,2 ]
Hu, Ming-Jhe [1 ,2 ]
Wang, Jyh-Liang [3 ]
Tsai, Chun-Chien [1 ,2 ]
Chang, Chia-Tsung [1 ,2 ]
Cheng, Huang-Chung [1 ,2 ]
机构
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[3] Ming Chi Univ Technol, Dept Elect Engn, Taipei 24301, Taiwan
关键词
Nanometal-Induced Crystallization; Thin-Film Transistor; Nickel; SILICIDE-MEDIATED CRYSTALLIZATION; METAL-INDUCED CRYSTALLIZATION; AMORPHOUS-SILICON; POLYCRYSTALLINE SILICON; LATERAL CRYSTALLIZATION; EXCIMER-LASER; TEMPERATURE; MICROSCOPY; TFTS; FABRICATION;
D O I
10.1166/jnn.2011.4338
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The effects of active layer thickness and device dimensions on nanometal-induced crystallization (nano-MIC) were studied to determine the electrical characteristics of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with bottom-gate structures. The nano-MIC poly-Si film was obtained via deposition of a 0.4-nm-thick Ni film on the amorphous silicon layer and subsequent annealing at 550 degrees C for 0.5 to 8 h. The EDS revealed a similar to 0.1% Ni concentration in the poly-Si film. The cross-sectional TEM image shows the vertical-grain growth mechanism, where the bottom side of the grain exhibits a larger crytalline area than the top side. Therefore, the field effect mobility of the bottom-gate poly-Si TFTs increases with increased active-amorphous-silicon (a-Si) thickness. Furthermore, the mobility increases when the device dimensions are scaled down. A mechanism for explaining such phenomenon in relation to the nano-MIC bottom-gate poly-Si TFTs was also proposed.
引用
收藏
页码:5612 / 5617
页数:6
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