Recrystallization behavior of silicon implanted with phosphorus atoms by infrared semiconductor laser annealing

被引：9

作者：

Sameshima, Toshiyuki ^{[1
]}

Matsuda, Yasuhiro ^{[2
]}

Andoh, Yasunori ^{[2
]}

Sano, Naoki ^{[3
]}

机构：

[1] Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan

[2] Nissin Ion Equipment Co Ltd, Koka, Shiga 5280068, Japan

[3] High Syst Corp, Yokohama, Kanagawa 2220033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 03期

关键词：

activation; dopant; crystallization; reflectivity; crystal line-volume ratio;

D O I：

10.1143/JJAP.47.1871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the recrystallization behavior of silicon implanted with phosphorus atoms at 10 and 70keV with a dose of 2 x 10(15) cm(-2). The samples were coated with a 200-nm-thick diamond-like-carbon optical absorption layer and then annealed by irradiation with a 940 nm continuous-wave laser at 70 kW/cm(2). An analysis of optical reflectivity spectra showed an in-depth distribution of the crystalline volume ratio. The amorphized surface regions produced by the phosphorus implantation were recrystallized from the bottom region by laser annealing. They were almost completely recrystallized by the laser annealing for 2.6 ms. The in-depth profiles of phosphorus concentration hardly changed for the laser annealing for 2.6 ms. The implanted regions were effectively activated by the laser annealing and the sheet resistance markedly decreased to 102 and 46 Omega/sq for implantion at 10 and 70 keV, respectively.

引用

页码：1871 / 1875

页数：5

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