High carrier mobility in transparent Ba1-xLaxSnO3 crystals with a wide band gap

被引：174

作者：

Luo, X. ^{[1
,2
]}

Oh, Y. S. ^{[3
,4
]}

Sirenko, A. ^{[5
]}

Gao, P. ^{[5
]}

Tyson, T. A. ^{[5
]}

Char, K. ^{[6
]}

Cheong, S-W. ^{[1
,2
,3
,4
]}

机构：

[1] Pohang Univ Sci & Technol, Lab Pohang Emergent Mat, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[3] Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA

[4] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[5] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

[6] Seoul Natl Univ, Dept Phys & Astron, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

NEUTRON POWDER DIFFRACTION; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; BASNO3; LANTHANUM; OXIDE; SPECTROSCOPY; BARIUM; SRTIO3; FILMS;

D O I：

10.1063/1.4709415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discovered that perovskite (Ba,La) SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of similar to 8-10 x 10(19) cm(-3) is found to be similar to 103 cm(2) V-1 s(-1) at room temperature, and the precise measurement of the band gap Delta of a BaSnO3 crystal shows Delta = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba, La) SnO3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709415]

引用

页数：5

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