Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials

被引：4

作者：

Slobodyan, T. E. ^{[1
]}

Bulashevich, K. A. ^{[1
,2
]}

Karpov, S. Yu. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Soft Impact Ltd, St Petersburg 194156, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782608070154

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the first part of our study, scalar wave equations for the guided TE and TM modes in laser heterostructures based on nitrides of Group III elements are derived taking into account the anisotropy of optical properties of these nitrides. The available experimental data on optical properties of multicomponent nitrides (and also sapphire and silicon carbide used typically as substrates in growing the nitride heterostructures) are analyzed. Based on this analysis, approximations of spectral dependences of permittivities for ordinary and extraordinary waves for these materials are suggested.

引用

页码：845 / 851

页数：7

共 15 条

[1] Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers [J].

Bergmann, MJ ;

Özgür, Ü ;

Casey, HC ;

Everitt, HO ;

Muth, JF .

APPLIED PHYSICS LETTERS, 1999, 75 (01) :67-69

[2]

BORN M, 1969, PRINCIPLES OPTICS, pCH1

[3] Optical confinement and threshold currents in III-V nitride heterostructures: Simulation [J].

Bougrov, VE ;

Zubrilov, AS .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :2952-2956

[4] Waveguide properties of gallium, aluminum, and indium nitride heterostructures [J].

Bugrov, VE ;

Zubrilov, AS .

SEMICONDUCTORS, 1997, 31 (01) :51-54

[5]

Goldberg Y., 2001, PROPERTIES ADV SEMIC

[6]

Ozgür U, 2001, APPL PHYS LETT, V79, P4103, DOI 10.1063/1.1426270

[7]

Pankove J. I., 1971, OPTICAL PROCESSES SE

[8]

PIKHTIN AN, 1978, FIZ TEKH POLUPROV, V22, P969

[9] Simulation and optimization of 420 nm InGaN/GaN laser diodes [J].

Piprek, J ;

Sink, RK ;

Hansen, MA ;

Bowers, JE ;

DenBaars, SP .

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 :28-39

[10]

Röwe M, 2001, PHYS STATUS SOLIDI A, V188, P65, DOI 10.1002/1521-396X(200111)188:1<65::AID-PSSA65>3.0.CO

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