共 46 条
Integration of organic electrochemical transistors and immuno-affinity membranes for label-free detection of interleukin-6 in the physiological concentration range through antibody-antigen recognition
被引:71
作者:
Gentili, Denis
[1
]
D'Angelo, Pasquale
[2
]
Militano, Francesca
[3
]
Mazzei, Rosalinda
[3
]
Poerio, Teresa
[3
]
Brucale, Marco
[1
]
Tarabella, Giuseppe
[2
,4
]
Bonetti, Simone
[5
]
Marasso, Simone L.
[2
,6
]
Cocuzza, Matteo
[2
,6
]
Giorno, Lidietta
[3
]
Iannotta, Salvatore
[2
]
Cavallini, Massimiliano
[1
]
机构:
[1] CNR, ISMN, Via Gobetti 101, I-40129 Bologna, Italy
[2] CNR, IMEM, Parco Area Sci 37-A, I-43124 Parma, Italy
[3] CNR, ITM, Via Pietro Bucci 17-C, I-87036 Arcavacata Di Rende, Italy
[4] Camlin Italy Srl, Str Budellungo 2, I-43123 Parma, Italy
[5] CellDynam iSRL, Via P Gobetti 101, I-40129 Bologna, Italy
[6] Politecn Torino, Chilab Mat & Microsyst Lab, Dipartimento Sci Applicata & Tecnol DISAT, Via Lungo Piazza Armi 6, I-10034 Chivasso, Italy
关键词:
SELF-ASSEMBLED MONOLAYERS;
IMPEDANCE SPECTROSCOPY;
CAPACITIVE BIOSENSOR;
GOLD;
SURFACES;
ENZYME;
FUNCTIONALIZATION;
FABRICATION;
MODULATION;
ADSORPTION;
D O I:
10.1039/c8tb01697f
中图分类号:
TB3 [工程材料学];
R318.08 [生物材料学];
学科分类号:
0805 ;
080501 ;
080502 ;
摘要:
We demonstrate the label-free and selective detection of interleukin-6 (IL-6), a key cell-signaling molecule in biology and medicine, by integrating an OECT with an immuno-affinity regenerated cellulose membrane. The objective of the membrane is to increase the local concentration of IL-6 at the sensing electrode and, thereby, enhance the device response for concentrations falling within the physiological concentration range of cytokines. The OECT gate electrode is functionalized with an oligo(ethylene glycol)-terminated self-assembled alkanethiolate monolayer (SAM) for both the immobilization of anti IL-6 antibodies and the inhibition of non-specific biomolecule binding. The OECT gate/electrolyte interface is exploited for the selective detection of IL-6 through the monitoring of antigen-antibody binding events occurring at the gate electrode.
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页码:5400 / 5406
页数:7
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