Analysis of Effective Gate Length Modulation by X-Ray Irradiation for Fully Depleted SOI p-MOSFETs

被引：16

作者：

Kurachi, Ikuo ^{[1
]}

Kobayashi, Kazuo ^{[2
]}

Okihara, Masao ^{[3
]}

Kasai, Hiroki ^{[4
]}

Hatsui, Takaki ^{[2
]}

Hara, Kazuhiko ^{[5
]}

Miyoshi, Toshinobu ^{[1
]}

Arai, Yasuo ^{[1
]}

机构：

[1] High Energy Accelerator Res Org, Ibaraki 3050801, Japan

[2] RIKEN SPring 8 Ctr, Sayo 6715148, Japan

[3] Lapis Semicond Co Ltd, Yokohama, Kanagawa 2228575, Japan

[4] Lapis Semicond Miyagi Co Ltd, Ohira, Miyagi 9813693, Japan

[5] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 08期

基金：

日本学术振兴会;

关键词：

Fully depleted-silicon-on-insulator (FD-SOI); gate length modulation; MOSFET; sidewall spacer; X-ray radiation hardness; TRANSISTOR RESPONSE; RADIATION; DAMAGE;

D O I：

10.1109/TED.2015.2443797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An X-ray irradiation degradation mechanism has been investigated for fully depleted-silicon-on-insulator (FD-SOI) p-channel MOSFETs (p-MOSFETs). It is found that the drain current degradation by the X-ray irradiation has gate length dependence showing 20% degradation for L = 0.2 mu m, while 8% for L = 10 mu m after the 1.4 kGy(Si) X-ray irradiation. Using Terada's method, it was found that the degradation is not due to mobility degradation but due to radiation-induced gate length modulation (RIGLEM) and the associated increase of source and drain parasitic resistance. The major cause of degradation induced by the RIGLEM is explained by an analytical model, assuming a positive charge generation in sidewall spacers. It can be suggested that the X-ray irradiation degradation of FD-SOI p-MOSFET can be improved by optimizing the lightly doped drain region.

引用

页码：2371 / 2376

页数：6

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