InP nanostructures formed in GaP-based nanowires grown on Si(111) substrates

被引：11

作者：

Tateno, K. ^{[1
]}

Zhang, G. ^{[1
]}

Nakano, H. ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 12期

基金：

日本学术振兴会;

关键词：

crystal structure; vapor phase epitaxy; nanowire; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.03.001

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two types of InP growth in GaP-based nanowires have been reported. The nanowires were grown by the vapor-liquid-solid method using An particles of around 20-nm diameter as catalysts. For GaP/InP/GaP nanowire growth, InP egg-like structures were formed when the InP growth temperature was higher than the GaP growth one. Successively, the second GaP nanowire could be grown on these InP structures. Transmission electron microscopy and energy dispersive X-ray spectroscopy analyses indicated that these InP nanostructures were grown in both the axial and radial directions and that the edge of the first GaP nanowires was partly covered with InP, which formed a core-shell structure. For InP capping growth, which was performed after the growth of two-times-alternated GaP/GaAs on GaP nanowires, selective InP growth on the two GaAs parts was confirmed. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2966 / 2969

页数：4

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