Post annealing effects on InP single crystals grown by Liquid Encapsulated Czochralski method

被引：1
|
作者：
Iwasaki, K [1 ]
Tanaka, Y [1 ]
Ishii, K [1 ]
Sato, T [1 ]
机构：
[1] Showa Denko KK, Chichibu Works, Chichibu, Saitama 36918, Japan
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712408
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the post-growth annealing effects on InP single crystals. The materials we used were S-doped and Fe-doped InP single crystals grown by Liquid Encapsulated Czochralski (LEC) method. These crystals were annealed at 900 degrees C - 980 degrees C for 10 hours. Residual stress in crystal was reduced by annealing, and higher annealing temperature was more effective for the reduction of stress. The reduction of PL intensity was observed in annealed S-doped crystals, and the reduction was remarkable on the periphery. In the case of Fe-doped crystal significant change on PL signal was not observed, but there is some increase of hall mobility.
引用
收藏
页码：88 / 91
页数：4
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