Leakage current improvement of liquid-phase-deposited TixSi1-xOy films on amorphous silicon with ammonium hydroxide incorporation by postmetallization annealing

被引：1

作者：

Lee, Ming-Kwei ^{[1
]}

Lee, Hung-Chang ^{[1
]}

Chang, Chih-Te ^{[1
]}

Hsu, Chih-Min ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 33-35期

关键词：

TixSi1-xOy; H2TiF6; NH4OH; PMA; a-Si;

D O I：

10.1143/JJAP.46.L836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, amorphous titanium silicon oxide films were grown on amorphous silicon substrate by liquid-phase deposition with the growth solution of hexafluorotitanic acid and boric acid. The incorporation of ammonium hydroxide in the growth solution can decrease the etching rate of the amorphous silicon substrate and improve the leakage current density. The leakage current can be improved by thermal annealing in nitrogen and oxygen ambients and can be much improved to 3.5 x 10(-6) A/cm(2) at -0.8 MV/cm by postmetallization annealing at 400 degrees C. The dielectric constant is 16.2.

引用

页码：L836 / L838

页数：3