Effects of substrate bias power on the surface of ITO electrodes during O2/CF4 plasma treatment and the resulting performance of organic light-emitting diodes

被引：9

作者：

Han, D. M. ^{[1
]}

Lee, J. H. ^{[1
]}

Jeong, K. H. ^{[1
]}

Lee, J. G. ^{[1
]}

机构：

[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

来源：

METALS AND MATERIALS INTERNATIONAL | 2010年 / 16卷 / 04期

关键词：

conductors; optoelectronic materials; oxides; surface modification; bias power-induced defects; INDIUM-TIN-OXIDE; CHEMICAL-VAPOR-DEPOSITION; ELECTROLUMINESCENT DEVICES; HOLE INJECTION; WORK FUNCTION; PHOTOELECTRON-SPECTROSCOPY; FILMS; IMPROVE; MODEL; LAYER;

D O I：

10.1007/s12540-010-0816-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During surface treatment using O-2/CF4 plasma chemistry, the bias power applied to the indium-tin-oxide(ITO) substrate significantly degrades the electrical and optical performance of the organic light emitting diode (OLED) formed on the ITO electrode as a result of the formation of CFx polymer, In-Sn-F compounds, and structural defects. Application of bias power to the substrate effectively increases the sheath potential over the substrate and thus the flux of CFx (+) ion created in the O-2/CF4 plasma, which leads to the production of CFx polymers as well as structural defects.

引用

页码：627 / 632

页数：6