Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz

被引：5

作者：

Arscott, S ^{[1
]}

David, T ^{[1
]}

Mélique, X ^{[1
]}

Mounaix, P ^{[1
]}

Vanbésien, O ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, UMR CNRS 8520, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 2000年 / 10卷 / 11期

关键词：

heterojunction barrier varactor diode; InP-based materials; substrate-transfer; Terahertz frequency;

D O I：

10.1109/75.888836

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP-based heterostructure barrier varactor (HBV) devices employing air-bridge technology have been fabricated on a quartz host substrate following a transfer-substrate technique. Electrical characterization demonstrates highly symmetrical I(V) and C(V) characteristics due to the preservation of the high quality MBE epitaxial layers during the transfer process. Small signal RF measurements have been performed up to 110 GHz and display a marked reduction in the values of parasitic resistance and capacitance, thus confirming the ability of the devices to operate in the upper-part of the mm spectrum.

引用

页码：472 / 474

页数：3

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