Measurement of the clustering energy for manganese silicide islands on Si(001) by Ostwald ripening

被引：7

作者：

Krause, M. R. ^{[1
]}

Stollenwerk, A. J. ^{[1
]}

Licurse, M. ^{[1
]}

LaBella, V. P. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 04期

基金：

美国国家科学基金会;

关键词：

ELECTRONIC-STRUCTURE; SURFACE-DIFFUSION; EPITAXIAL-GROWTH; SELF-SIMILARITY; THIN-FILMS; PHASE; NUCLEATION; MICROSCOPY; MNSI1.7; STRAIN;

D O I：

10.1063/1.2766681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The rate of growth during annealing of manganese silicide islands in the submonolayer coverage regime on the Si(001) surface has been measured by scanning tunneling microscopy. The fourth power of the growth rate is linearly dependent upon the annealing time, consistent with a diffusion limited Ostwald ripening mechanism for island growth. The growth rate has been determined for four different annealing temperatures to extract the activation energy for clustering, which has been found to be 2.6 +/- 0.2 eV.

引用

页数：3

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