A comprehensive model for breakdown mechanism in HfO2 high-κ gate stacks

被引：41

作者：

Ranjan, R ^{[1
]}

Pey, KL ^{[1
]}

Tung, CH ^{[1
]}

Tang, LJ ^{[1
]}

Groeseneken, G ^{[1
]}

Bera, LK ^{[1
]}

De Gendt, S ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, Singapore 639798, Singapore

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on physical analysis results, a model describing the breakdown (BD) mechanism ofHfO(2)/polysilicon gate stack is proposed. Due to the high mechanical strength and the polycrystalline nature of annealed HfO2 dielectrics, and a very complicated BD induced thermo-chemical reaction and self-healing process, the BD mechanism and transient evolution in HfO2 gate stacks are different from that of ultrathin SiOxNy. The formation of a percolation path is probably assisted by grain boundaries and/or enhanced electric field strength near the poly-Si edge. Besides Polarity-dependent dielectric-BD-induced epitaxy (DBIE), due to the BD induced thermo-chemical reactions among HfO2, SiOx (i.e. IL oxide), Hf-compounds and Si, the formation of a dielectric-based "clog" which is HfSixOy-rich, termed as dielectric-BD-induced self-healing insulating cap (SHIC), is proposed. The microstructures of DBIE and SHIC are responsible for the leakage current evolution during a BD event in HfO2 gate stacks.

引用

页码：725 / 728

页数：4

共 8 条

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