Emission channeling study of annealing of radiation damage in heavy-ion implanted diamond

The annealing of lattice damage in diamond produced by the implantation of heavy ions was studied by the emission channeling technique. Radioactive In-111 and As-73 ions were implanted at 300 K into IIa diamonds with [110] surface orientations, at energies of 120 and 60 keV and doses of 5 X 10(12) and 1 X 10(13) ions cm(-2), respectively. Axial channeling measurements were performed on the emitted conversion electrons after annealing the diamonds at temperatures up to 1673 K. Two distinct stages for annealing of implantation damages are observed, the first between 300 and 600 K, and the second setting in at 1200 K. The lattice sites of the implanted ions were determined from comparisons of the measured yields with channeling effects calculated using the dynamical theory of electron diffraction. For In ions the fraction at substitutional lattice sites was about 40%, while for As ions the fraction at such sites exceeded 50%. Implantation of In ions in diamond at high temperature (1373 K) gave the same maximum channeling yield as that obtained with implantation at 300 K followed by annealing above 1200 K.