Quantum mechanical effects on heat generation in nano-scale MOSFETs

被引：0

作者：

Ji Min ^{[1
]}

Zhao Kai ^{[1
]}

Du Gang ^{[1
]}

Kang Jin-Feng ^{[1
]}

Han Ru-Qi ^{[1
]}

Liu Xiao-Yan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

CHINESE PHYSICS B | 2008年 / 17卷 / 05期

关键词：

heat generation; quantum potential; collision broadening;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effect transistors (MOSFETs) by solving the quantum Boltzmann equation. The influence of QM effects both in real space and K space on the heat generation is investigated.

引用

页码：1869 / 1873

页数：5

共 13 条

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