Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2/polystyrene microlens arrays

被引：2

作者：

Ee, Yik-Khoon ^{[1
]}

Kumnorkaew, Pisist ^{[2
]}

Tong, Hua ^{[1
]}

Arif, Ronald A. ^{[1
]}

Gilchrist, James F. ^{[2
]}

Tansu, Nelson ^{[1
]}

机构：

[1] Lehigh Univ, Ctr Opt Technologies, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA

[2] Lehigh Univ, Ctr Adv Mat & Nanotechnol, Dept Chem Engn, Bethlehem, PA 18015 USA

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS XII | 2008年 / 6910卷

基金：

美国国家科学基金会;

关键词：

InGaN; quantum wells; light extraction; light-emitting diodes (LEDs); microlens; microspheres;

D O I：

10.1117/12.763973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated and analyzed 480-nm emitting III-Nitride LEDs using SiO2/polystyrene (PS) microlens arrays, deposited via rapid-convective-deposition. Output power of MOCVD-grown InGaN QW LEDs with SiO2/PS microlens exhibited improvement of 219%. Numerical simulation of the light extraction efficiency optimization of III-Nitride LEDs with SiO2/PS microlens was carried out using Monte Carlo ray tracing including 3D self-consistent photon-carrier interaction. The light extraction efficiency of the LEDs with microlens array is optimized for the PS layer thickness and the SiO2 microspheres diameter. The simulations show good agreement with experiments, indicating the use of SiO2/PS microlens leads to increased photon escape cone.

引用

页数：8

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