A compact C-V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications

被引：14

作者：

Gangwani, Parvesh

Pandey, Sujata

Haldar, Subhasis

Gupta, Mridula

Gupta, R. S.

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India

[2] Amity Sch Engn & Technol, New Delhi, India

[3] Univ Delhi, Motilal Nehru Coll, Dept Phys, New Delhi 110021, India

来源：

MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 8-9期

关键词：

heterostructure; AlGaN/GaN MODFET; drain current; transconductance; cutoff frequency;

D O I：

10.1016/j.mejo.2007.07.117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a theoretical model of AlGaN/GaN high electron mobility transistor (HEMT) that includes the effect of spontaneous and piezoelectric polarization. Present model also incorporates the effect of mole fraction dependent mobility, saturation velocity and the accurate 2-DEG density in HEMT as a function of gate voltage in subthreshold, linear and saturation regimes. This paper reports a detailed 2-D analysis of capacitance-voltage (C-V) characteristics. The contribution of various capacitances including fringing field capacitance on the performance of the device is also shown. The model further predicts the transconductance, drain conductance and frequency of operation and is in close proximity with the experimental data which confirms the validity of proposed model. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：848 / 854

页数：7

共 21 条

[1] Growth and applications of Group III nitrides [J].