Chemically amplified photoresist for electron beam lithography

被引：1

作者：

Choi, Y ^{[1
]}

Park, SW ^{[1
]}

Kim, Y ^{[1
]}

Lee, H ^{[1
]}

机构：

[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2003年 / 16卷 / 03期

关键词：

chemically amplified photoresist; bis(trimethylsilyl)isopropyl methacrylate; electron beam lithography;

D O I：

10.2494/photopolymer.16.451

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

[No abstract available]

引用

页码：451 / 454

页数：4

共 11 条

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