Investigation of morphotropic phase boundary in sputter-grown Pb(Zrx, Ti1-x)O3 epitaxial films

被引：0
|
作者：
Noda, Ryuta [1 ,2 ]
Shimidzu, Takahiro [1 ,2 ]
Wasa, Kiyotaka [3 ]
Yanagitani, Takahiko [1 ,2 ,4 ]
机构：
[1] Waseda Univ, Shinjuku Ku, Tokyo 1690072, Japan
[2] ZAIKEN, Tokyo, Japan
[3] Yokohama City Univ, Yokohama, Kanagawa, Japan
[4] JST PRESTO, Tokyo, Japan
来源：
2018 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2018年
关键词：
MPB; PZT; Epitincialfilnt; Sputtering;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pb(Zr-x,Ti1-x)O-3 (PZT) ceramics display the morphotropic phase boundary (MPB) around x=0.53. In general, PZT ceramics show the anomalously high piezoelectricity and dielectric constant near the MPB. However, PbTiO3 sputter-epitaxial films at x=0 showed higher k(t)(2) than PZT near the MPB in our previous studies, with good reproducibility. In this study, in order to demonstrate that PZT sputter-epitaxial films do not display MPB (phase transition), we measured lattice constant, k(t)(2), dielectric constant and coercive field as a function of x (Zr concentration). As a result, the phase transition was not observed in PZT sputter-epitaxial films. Such phenomena observed in sputter-epitaxial films may be attributed to the damage due to the negative oxygen ion bombardment on the films.
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页数：4
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