The Transparent Conductive Properties of Manganese-Doped Zinc Oxide Films Deposited by Chemical Bath Deposition

被引：15

作者：

Fang, J. S. ^{[1
,2
]}

Luo, W. H. ^{[1
]}

Hsu, C. H. ^{[2
]}

Yang, J. C. ^{[2
]}

Tsai, T. K. ^{[1
,2
]}

机构：

[1] Natl Formosa Univ, Inst Mat Sci & Green Energy Engn, Huwei 632, Taiwan

[2] Natl Formosa Univ, Dept Mat Sci & Engn, Huwei 632, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 01期

关键词：

Chemical bath deposition; manganese-doped zinc oxide; transparent conductive oxide; diluted magnetic semiconductor; ZNO THIN-FILMS; SOL-GEL METHOD; ROOM-TEMPERATURE; MAGNETIC-PROPERTIES; OPTICAL-PROPERTIES; AL; FERROMAGNETISM; ATMOSPHERE; ROUTE; GLASS;

D O I：

10.1007/s11664-011-1770-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Manganese-doped zinc oxide (Mn-doped ZnO) thin films were prepared using chemical bath deposition (CBD), and the impacts of the manganese dopant concentration on the structure, electrical resistivity, optical transmission, and magnetic properties were investigated using x-ray diffractometry, Hall-effect measurements, ultraviolet-visible-near-infrared (UV-Vis-IR) spectrophotometry, and vibrating sample magnetometry (VSM), respectively. The concentration of the manganese dopant in the ZnO thin film critically impacted the resulting properties, and the 4.0 at.% Mn-doped ZnO film had a resistivity of 5.8 x 10(-2) Omega cm, transmittance of 75.6% in the visible light range, and bandgap of 3.30 eV when the film was annealed at 600A degrees C in an Ar + H-2 atmosphere. Annealing the film could enhance its magnetic properties such that the film had a saturation magnetization of 21.0 emu/cm(3) and a coercivity of 45.7 Oe after annealing at 600A degrees C. Because of these electrical, optical, and magnetic properties, Mn-doped thin films are promising for use in spintronic devices.

引用

页码：122 / 129

页数：8

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