An on-chip, attofarad interconnect charge-based capacitance measurement (CBCM) technique

被引：64
作者：
Chen, JC
McGaughy, BW
Sylvester, D
Hu, CM
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.553124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a sensitive and simple technique for parasitic interconnect capacitance measurement with 0.01fF or 10 aF sensitivity is presented. This on-chip technique is based upon an efficient test structure design. No reference capacitor is needed. The measurement itself is also simple; only a DC current meter is required. We have applied this technique to extract various interconnect geometry capacitances, including the capacitance of a single Metal 2 over Metal 1 crossing, for an industrial double metal process.
引用
收藏
页码：69 / 72
页数：4
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