Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

被引：167

作者：

Zhou, Chunhua ^{[1
]}

Jiang, Qimeng ^{[1
]}

Huang, Sen ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 08期

关键词：

AlGaN/GaN high-electron-mobility transistors (HEMTs); silicon substrate; space-charge-limited current (SCLC) conduction; traps; vertical breakdown; CHARGE-LIMITED CURRENTS; CURRENT COLLAPSE; TRAPS; BUFFER;

D O I：

10.1109/LED.2012.2200874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage (I-V) measurements. It is found that the top-to-substrate vertical breakdown voltage (BV) is dominated by the space-charge-limited current conduction involving both acceptor and donor traps in the GaN buffer/transition layer. From the temperature-dependent transient backgating measurements, the acceptor level at E-V + 543 meV and the donor level at E-C-616 meV were identified.

引用

页码：1132 / 1134

页数：3

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