Characterization of MOS structures with ultra-thin tunneling oxynitride

被引：0
|
作者：
Fujioka, H [1 ]
Wann, C [1 ]
Park, D [1 ]
Hu, C [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源：
SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES | 1996年 / 405卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：333 / 338
页数：6
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