8.6% Efficiency CZTSSe solar cell with atomic layer deposited Zn-Sn-O buffer layer

被引：62

作者：

Li, Xianglin ^{[1
]}

Su, Zhenghua ^{[1
]}

Venkataraj, Selvaraj ^{[2
]}

Batabyal, Sudip Kumar ^{[1
]}

Wong, Lydia Helena ^{[1
,3
]}

机构：

[1] Nanyang Technol Univ, Energy Res Inst, 50 Nanyang Dr,Res Techno Plaza,X Frontier Block, Singapore 637553, Singapore

[2] Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117574, Singapore

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 157卷

关键词：

CZTSSe; Zn-Sn-O; Atomic layer deposition; UPS; Solar cell; 5.1-PERCENT EFFICIENCY; SURFACE; FILMS; GEL;

D O I：

10.1016/j.solmat.2016.05.032

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu2ZnSn(S, Se)(4) (CZTSSe) device is fabricated with Zn1-x SnxO (ZTO) buffer layer deposited by atomic layer deposited (ALD). The ALD process results in a precise control of thickness and Sn/(Sn+Zn) ratio of the buffer layer. The performance of the CZTSSe device with ZTO buffer layer has been enhanced by adjusting proper Zn and Sn ratio during the ALD process. The optimized Sn/(Sn+Zn) pulse ratio is found to be around 0.167, with a thickness of around 50 nm. The champion device with a ZTO buffer layer has an efficiency of 8.60% (active area efficiency 9.20%) compared with 8.14% (active area efficiency 8.70%) of the reference solar cell with chemical bath deposited. CdS buffer layer. The optimum device performance is a result of optimized band alignment between CZTSSe absorber and the ALD ZTO buffer as shown by ultraviolet photoelectron spectroscopy (UPS). (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：101 / 107

页数：7

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