Three-level stencil alignment fabrication of a high-k gate stack organic thin film transistor

被引：4

作者：

Cvetkovic, Nenad V. ^{[1
]}

Sidler, Katrin ^{[2
]}

Savu, Veronica ^{[2
]}

Brugger, Juergen ^{[2
]}

Tsamados, Dimitrios ^{[1
]}

Ionescu, Adrian M. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Nanoelect Devices Lab, Nanolab, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Microsyst Lab LMIS1, CH-1015 Lausanne, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

Organic; Pentacene; OTFT; Stencil; Flexible; Polyimide; Parilene; Top-gate; Double-gate; Alignment; High-k; Hafnium oxide; Diode; Thin film; Polymer;

D O I：

10.1016/j.mee.2010.12.086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work a high-k double-gate pentacene field-effect transistor architecture is presented. The devices are fabricated on a flexible polyimide substrate by three aligned levels of stencil lithography combined with standard photolithography. ALD-deposited high-k HfO2 and parylene D device passivation, together with Pt top-gate deposition provide very good electrostatic control of the channel, showing low leakage current and improved subthreshold. The ION/IOFF ratio is of the order of 10(6) and the IOFF lower than 0.1 pA/mu m. We also report a comparison of the normal, FET-like (VD < 0) and reverse, diode-like (VD > 0) modes of the p-OFET. We find a higher current drive in the reverse diode-like mode compared to normal FET-like mode. The reverse mode has clearly defined OFF and ON states versus the drain voltage and non-saturated output characteristics, which makes it suitable for the use in RF and analog applications of OFETs. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2496 / 2499

页数：4

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