Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition

被引：12

作者：

Fanaei, T.

Camjre, N. ^{[1
]}

Aktik, C.

Gujrathi, S. ^{[2
]}

Lessard, A. ^{[1
]}

Awad, Y. ^{[1
]}

Oulachgar, E.

Scarlete, M. ^{[3
]}

机构：

[1] SiXtron Adv Mat Inc, Sherbrooke, PQ J1J 2E8, Canada

[2] Univ Montreal, Dept Phys, Grp Rech Phys & Technol Couches Minces, Montreal, PQ H3C 3J7, Canada

[3] Bishops Univ, Dept Chem, Lennoxville, PQ J1M 1Z7, Canada

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 12期

关键词：

amorphous silicon carbide (a-SiC); polymer-source chemical vapor deposition (PS-CVD); CV measurements; Fourier transform infrared spectroscopy (FTIR); deposition temperature;

D O I：

10.1016/j.tsf.2007.06.072

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polymeric source chemical vapor deposition (PS-CVD) was used to synthesize amorphous silicon carbide (a-SiC) thin films. The PS-CVD process was conducted at temperatures between 750 and 1000 degrees C. The substrates used were silicon single crystal wafers of p-type and n-type, and thermally grown silicon dioxide substrates. The chemical and electrical properties of the films were studied by various techniques, including Fourier transform infrared spectroscopy, elastic recoil detection (ERD), and capacitance-voltage technique. A correlation was observed between the average concentration of oxygen in the films and the deposition temperature, linking a low oxygen concentration to a high deposition temperature. However, the concentration of oxygen in the films deposited at the same temperature is independent of the substrate. The thin films deposited at low temperature showed insulating behaviour, while the semiconducting behaviour is obtained at high deposition temperatures. Ohmic contacts were obtained on the deposited semiconductor thin film by evaporating nickel contacts, followed by annealing of the sample at 800 degrees C for 2 min. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：3755 / 3760

页数：6

共 27 条

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