Submonolayer homoepitaxial growth on Ag(110)

被引：27
作者：
De Giorgi, C
Aihemaiti, P
de Mongeot, FB
Boragno, C
Ferrando, R
Valbusa, U
机构：
[1] Univ Genoa, Dipartimento Fis, INFM, UdR Genova, I-16146 Genoa, Italy
[2] Univ Genoa, Dipartimento Fis, CNR, CFSBT, I-16146 Genoa, Italy
[3] Xinjiamg Univ, Dept Phys, Urumqi 830046, Peoples R China
来源：
SURFACE SCIENCE | 2001年 / 487卷 / 1-3期
关键词：
epitaxy; growth; silver; scanning tunneling microscopy; Monte Carlo simulations;
D O I：
10.1016/S0039-6028(01)01065-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The submonolayer homoepitaxial growth on Ag(1 1 0) is studied by using a variable-temperature ultrahigh vacuum scanning tunneling microscope. The evolution of island density is studied as a function of temperature at given flux (approximate to0.0025 ML s(-1)) and coverage (0.16 ML) to evaluate the energy barriers and the binding energies for the in-channel and cross-channel diffusion. The experimental results are compared with kinetic Monte Carlo simulation. (C) 2001 Elsevier Science B.V. All rights reserved.
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收藏
页码：49 / 54
页数：6
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