Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films

被引：21

作者：

Zhai, JW ^{[1
]}

Li, X ^{[1
]}

Chen, HD ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

THIN SOLID FILMS | 2004年 / 446卷 / 02期

关键词：

antiferroelectric thin film; structural properties; phase transitions; electric properties (section A);

D O I：

10.1016/j.tsf.2003.09.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The (Pb,Nb)(Zr,Sn,Ti)O-3 (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods. Films derived on the LNO/Pt/Ti/SiO2/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferroelectric (FE) switching field EAFE-FE, FE to AFE switching field EFE-AFE and the hysteresis DeltaE=EAFE-FE-EFE-AFE. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：200 / 204

页数：5

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