Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing

被引：13

作者：

Park, Ji-Sang ^{[1
,2
]}

Kim, Sunghyun ^{[1
,2
]}

Hood, Samantha N. ^{[1
,2
]}

Walsh, Aron ^{[1
,2
,3
]}

机构：

[1] Imperial Coll London, Thomas Young Ctr, Exhibit Rd, London SW7 2AZ, England

[2] Imperial Coll London, Dept Mat, Exhibit Rd, London SW7 2AZ, England

[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 21期

基金：

欧盟地平线“2020”; 英国工程与自然科学研究理事会;

关键词：

GENERALIZED GRADIENT APPROXIMATION; EFFICIENCY; RECOMBINATION; ALIGNMENT; SE;

D O I：

10.1063/1.5063793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the opencircuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnS4/CdS interface, consistent with a lower open-circuit voltage deficit. Published by AIP Publishing.

引用

页数：5

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