Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory

被引：21

作者：

Shih, Chih-Cheng ^{[1
]}

Chen, Wen-Jen ^{[2
]}

Chang, Kuan-Chang ^{[1
]}

Chang, Ting-Chang ^{[3
,4
]}

Tsai, Tsung-Ming ^{[1
]}

Chu, Tian-Jian ^{[1
]}

Tseng, Yi-Ting ^{[3
,4
]}

Wu, Cheng-Hsien ^{[1
]}

Su, Wan-Ching ^{[1
]}

Chen, Min-Chen ^{[3
,4
]}

Huang, Hui-Chun ^{[1
]}

Wang, Ming-Hui ^{[5
]}

Chen, Jung-Hui ^{[5
]}

Zheng, Jin-Cheng ^{[6
]}

Sze, Simon M. ^{[3
,4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[5] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 802, Taiwan

[6] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 10期

关键词：

ITO; RRAM; oxygen concentration gradient; conduction current fitting; OXYGEN CONCENTRATION GRADIENT; NONVOLATILE MEMORY; RESISTIVE MEMORY; RRAM DEVICES; ELECTRODES; ILLUMINATION;

D O I：

10.1109/LED.2016.2599218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lower switching voltage of indium-tinoxide (ITO)-based resistance random access memory (RRAM) with an inserted SiO2 thin film was presented. The amplitude of switching voltage of device was below 0.2 V whether measured by direct current or alternating current sweep operation. Notably, the observed reset voltage increased with temperature. To clarify the switching mechanism, conduction current fitting and switching voltage statistics were applied to explore the regular voltage variation dependent on temperature. In addition, a reaction model was proposed to explain the oxygen concentration gradient induced between the inserted SiO2 and ITO electrode on the ITO-based RRAM device.

引用

页码：1276 / 1279

页数：4

共 31 条

[1] Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory [J].

Banerjee, Writam ;

Xu, Xiaoxin ;

Liu, Hongtao ;

Lv, Hangbing ;

Liu, Qi ;

Sun, Haitao ;

Long, Shibing ;

Liu, Ming .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) :333-335

[2] Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory [J].

Celano, Umberto ;

Goux, Ludovic ;

Degraeve, Robin ;

Fantini, Andrea ;

Richard, Olivier ;

Bender, Hugo ;

Jurczak, Malgorzata ;

Vandervorst, Wilfried .

NANO LETTERS, 2015, 15 (12) :7970-7975

[3] Physical and chemical mechanisms in oxide-based resistance random access memory [J].

Chang, Kuan-Chang ;

Chang, Ting-Chang ;

Tsai, Tsung-Ming ;

Zhang, Rui ;

Hung, Ya-Chi ;

Syu, Yong-En ;

Chang, Yao-Feng ;

Chen, Min-Chen ;

Chu, Tian-Jian ;

Chen, Hsin-Lu ;

Pan, Chih-Hung ;

Shih, Chih-Cheng ;

Zheng, Jin-Cheng ;

Sze, Simon M. .

NANOSCALE RESEARCH LETTERS, 2015, 10

[4] Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices [J].

Chang, Kuan-Chang ;

Zhang, Rui ;

Chang, Ting-Chang ;

Tsai, Tsung-Ming ;

Lou, J. C. ;

Chen, Jung-Hui ;

Young, Tai-Fa ;

Chen, Min-Chen ;

Yang, Ya-Liang ;

Pan, Yin-Chih ;

Chang, Geng-Wei ;

Chu, Tian-Jian ;

Shih, Chih-Cheng ;

Chen, Jian-Yu ;

Pan, Chih-Hung ;

Su, Yu-Ting ;

Syu, Yong-En ;

Tai, Ya-Hsiang ;

Sze, Simon M. .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (05) :677-679

[5] Resistance random access memory [J].

Chang, Ting-Chang ;

Chang, Kuan-Chang ;

Tsai, Tsung-Ming ;

Chu, Tian-Jian ;

Sze, Simon M. .

MATERIALS TODAY, 2016, 19 (05) :254-264

[6] Developments in nanocrystal memory [J].

Chang, Ting-Chang ;

Jian, Fu-Yen ;

Chen, Shih-Cheng ;

Tsai, Yu-Ting .

MATERIALS TODAY, 2011, 14 (12) :608-615

[7] Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment [J].

Chen, Ji ;

Chang, Kuan-Chang ;

Chang, Ting-Chang ;

Tsai, Tsung-Ming ;

Pan, Chih-Hung ;

Zhang, Rui ;

Lou, Jen-Chung ;

Chu, Tian-Jian ;

Wu, Cheng-Hsien ;

Chen, Min-Chen ;

Hung, Ya-Chi ;

Syu, Yong-En ;

Zheng, Jin-Cheng ;

Sze, Simon M. .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (11) :1138-1141

[8] Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode [J].

Chen, Kai-Huang ;

Chang, Kuan-Chang ;

Chang, Ting-Chang ;

Tsai, Tsung-Ming ;

Liang, Shu-Ping ;

Young, Tai-Fa ;

Syu, Yong-En ;

Sze, Simon M. .

NANOSCALE RESEARCH LETTERS, 2016, 11

[9] Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory [J].

Chen, Po-Hsun ;

Chang, Kuan-Chang ;

Chang, Ting-Chang ;

Tsai, Tsung-Ming ;

Pan, Chih-Hung ;

Lin, Chih-Yang ;

Jin, Fu-Yuan ;

Chen, Min-Chen ;

Huang, Hui-Chun ;

Wang, Ming-Hui ;

Lo, Ikai ;

Zheng, Jin-Cheng ;

Sze, Simon M. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (05) :584-587

[10] Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory [J].

Chen, Po-Hsun ;

Chang, Kuan-Chang ;

Chang, Ting-Chang ;

Tsai, Tsung-Ming ;

Pan, Chih-Hung ;

Chu, Tian-Jian ;

Chen, Min-Chen ;

Huang, Hui-Chun ;

Lo, Ikai ;

Zheng, Jin-Cheng ;

Sze, Simon M. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) :280-283

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