Uniformity enhancement of the self-organized InAs quantum dots

被引：10

作者：

Zhu, HJ ^{[1
]}

Wang, ZM ^{[1
]}

Wang, H ^{[1
]}

Cui, LQ ^{[1
]}

Feng, SL ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0022-0248(98)00885-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the height of quantum dots. Uniformity of quantum dots has been enhanced because the full-width of half-maximum of photoluminescence decrease from 80 to 27 meV in these samples as the interruption time is increased. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time, which can be used to modulate energy level of quantum dots. All of the phenomenon mentioned above can be attributed to the diffusion of In atoms from the tops of InAs islands to the top of GaAs cap layer caused by the difference between the surface energies of InAs and GaAs. (C) 1999 Elsevier Science B.V. All rights reserved.

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收藏

页码：372 / 375

页数：4

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