Analysis of Thermal Resistance for High-Power Light-Emitting Diodes

被引:1
作者
Zhu, Wei Tao [1 ]
Pan, Kai Lin [1 ]
Ren, Guo Tao [1 ]
Wang, Jiao Pin [1 ]
Liu, Jing [1 ]
机构
[1] Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China
来源
ADVANCES IN MECHANICAL DESIGN, PTS 1 AND 2 | 2011年 / 199-200卷
关键词
High-power LED; Thermal Resistance; Thermal Transient Measurement; K factor (Temperature Coefficient of Resistance);
D O I
10.4028/www.scientific.net/AMR.199-200.1482
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper measures the LED thermal resistance characteristic by thermal transient tester (T3Ster) obtained the cumulative structure functions curve and differential structure functions curve. The actual K factor and optical power are obtained by testing I. The thermal resistance characteristic of each layer for LED structure are analyzed by testing II in different cases. The experimental results show that the bonding method and the heat sink size have tremendous influence on the LED thermal resistance's reduce, and the contact thermal resistance takes up a great proportion in LED total thermal resistance. The contact thermal resistance may reduce by pressure on interface and by a change of the attach material and the roughness of interface.
引用
收藏
页码:1482 / 1486
页数:5
相关论文
共 5 条
[1]   Thermal analysis of multi-chip LED packages [J].
Kim, Lan ;
Choi, Jonghwa ;
Jang, Sunho ;
Shin, Moo Whan .
ADVANCED LEDS FOR SOLID STATE LIGHTING, 2006, 6355
[2]  
Miao Jianwen, 2009, MANUFACTURING APPL D, V9
[3]   ON THE REPRESENTATION OF INFINITE-LENGTH DISTRIBUTED RC ONE-PORTS [J].
SZEKELY, V .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1991, 38 (07) :711-719
[4]  
Zhang Haibing, 2009, J OPTOELECTRONICS LA, V20
[5]  
Zhuang Peng, 2008, ADV DISPLAY, V91