An approach to determine small-signal model parameters for InP HBT up to 110 GHz

被引：9

作者：

Zhang Ao ^{[1
]}

Zhang Yi-Xin ^{[1
]}

Wang Bo-Ran ^{[1
]}

Gao Jian-Jun ^{[1
]}

机构：

[1] East China Normal Univ, Sch Informat Sci Technol, Shanghai 200241, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2018年 / 37卷 / 06期

基金：

中国国家自然科学基金;

关键词：

equivalent circuits; heterojunction bipolar transistor(HBT); device modeling; DIRECT EXTRACTION;

D O I：

10.11972/j.issn.1001-9014.2018.06.009

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper. The skin effect of the feedlines is taken into account in the proposed model. This method combines the analytical approach and empirical optimization procedure. The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances. An excellent fit between measured and simulated S-parameters in the frequency range of 2 similar to 110 GHz is obtained for InP HBT.

引用

页码：688 / 692

页数：5

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